Low Damage Etching of GaN Surfaces via Bias-Assisted Photoenhanced Electrochemical Oxidation in Deionized Water

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Low Damage Etching of GaN Surfaces via Bias-Assisted Photoenhanced Electrochemical Oxidation in Deionized Water

Properties of GaN surfaces etched by bias-assisted photoenhanced electrochemical (PEC) oxidation in deionized water and subsequent removal of the oxidized material are investigated using Schottky diodes fabricated on etched surfaces. It is demonstrated that with a short anneal at 700 C after removal of the oxide, it is possible to obtain a low damage surface with near ideal breakdown and capaci...

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ژورنال

عنوان ژورنال: Journal of Electronic Materials

سال: 2007

ISSN: 0361-5235,1543-186X

DOI: 10.1007/s11664-006-0009-0